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Mini-Circuits
ISO 9001 CERTIFIED
REV. A
M90118
ED-9366/14
ERA-8SM
MM/RS/CP
031209
Features
wide bandwidth, DC-2 GHz
high gain, 31.5 dB at 100 MHz, reduces component count
high power output, +12.5 dBm typ. at 1000 MHz
low noise
improved stability
protection against power supply transients
patent pending
50
, Broadband,
DC to 2 GHz
Electrical Specifications @ 25C
Applications
cellular
PCS
communication receivers & transmitters
FREQ.
H
H
H
H
H
(GHz)
MODEL
NO.
DC
OPERATING
POWER
@ Pin 3***
GAIN, dB Typical
over frequency, GHz
MAXIMUM
RATING**
THERMAL
RESIS-
TANCE
Cur-
rent
(mA)
Device
Volt
Typ Min Max
jc,
typ.
C/W
I
mA
P
mW
PRICE
$
Qty.
(25)
5
5
5
5
5
Low frequency cutoff determined by external coupling capacitors.
** Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
***Reliability predictions and normal operating conditions are applicable at current specified.
Outline Drawing
Outline Dimensions
(
)
inch
mm
Typical Biasing Configuration
1
0.1
2
3
4
CASE STYLE : WW107
ERA-8SM
DC-2
31.5
25
19
15
12
17
12.5
13
3.1
25
1.4 1.8
1.8
2.2
65
250
36
3.7 3.2 4.2
140
1.22
ERA-8SM
NEW!
VSWR
(:1)
Typ.
DYNAMIC
RANGE
@1GHz
NF
(dB)
Typ.
IP3
(dBm)
Typ.
MAXIMUM
POWER (dBm)
@1GHz
Input
(no
dmg.)
Min.
@
2 GHz
Output
(1dB
Comp.)
Typ.
Maximum Ratings
Operating Temperature
-45C to 85C
Storage Temperature
-65C to 150C
Suggested PCB Layout (PL-075)
Pin Configuration
RF IN
1
RF OUT
3
DC
3
GND EXT.
2,4
In
DC-1
GHz
1-4
GHz
Out
DC-1
GHz
1-4
GHz
Model Identification
Model
Marking
ERA-8SM
E8
Prefix letter (optional) designates assembly
location. Suffix letters (optional) are for wafer
identification.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
wt.
.012
.10 .020 .092 .085 .060 .007 .026 .235 .118 .235 .118 .072 .040 .020
grams
.30 2.54
.51 2.34 2.16 1.52
.18
.66 5.97 3.00 5.97 3.00 1.83 1.02 0.51
.015
Resistor Values
Vcc
"1%" Res.
7
88.7
8
118
9
143
10
174
11
200
12
226
13
255
14
280
15
309
Monolithic Amplifier
Surface Mount
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